NTJD4105C
ORDERING INFORMATION
Device
NTJD4105CT1
NTJD4105CT1G
NTJD4105CT2
NTJD4105CT2G
NTJD4105CT4
NTJD4105CT4G
Package
SOT ? 363
SOT ? 363
(Pb ? Free)
SOT ? 363
SOT ? 363
(Pb ? Free)
SOT ? 363
SOT ? 363
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
相关PDF资料
NTJD4152PT1 MOSFET P-CHAN DUAL 20V SOT-363
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NTJS3151PT1G MOSFET P-CH 12V 2.7A SOT-363
NTJS3157NT4G MOSFET N-CH 20V 3.2A SOT-363
NTJS4151PT1 MOSFET P-CH 20V 3.3A SOT-363
NTJS4160NT1G MOSFET N-CH 30V 1.8A SC88-6
相关代理商/技术参数
NTJD4105CT4 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4105CT4G 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4152P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88
NTJD4152PT1 功能描述:MOSFET 20V 0.88A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4152PT1G 功能描述:MOSFET 20V 0.88mA P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4158C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88
NTJD4158CT1G 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4158CT2G 功能描述:MOSFET PFET 20V .88A 1OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube